Berlin 2018 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 3: Oxide Semiconductors for Novel Devices (Focussed Session): Session I

Montag, 12. März 2018, 09:30–13:15, E 020

The class of semiconducting oxides includes low temperature processed amorphous thin films for bendable electronics and display technology as well as highly crystalline materials such as the wide band group-III sesquioxides being interesting for UV and DUV photo sensors, power electronics and even memristors. This session sets a focus on physical properties of such oxides, their growth methods and heterostructures for demonstrator devices. This focus session is supported by the Leibniz ScienceCampus GraFOx.

Organized by

Dr. Karsten Fleischer School of Physics, Trinity College Dublin, the University of Dublin Dublin 2, Ireland

Dr. Holger von Wenckstern Universität Leipzig Felix-Bloch-Institut für Festkörperphysik Halbleiterphysik Linnéstraße 5 04103 Leipzig, Germany

Prof. Dr. rer. nat. Holger Eisele Experimental Physics Technische Universität Berlin Department for Mathematics and Science Institute of Solid State Physics Hardenbergstr. 36, Sekr. EW 4-1, D-10623 Berlin, Germany

Dr. Oliver Bierwagen Paul-Drude-Institut für Festkörperelektronik (PDI) Hausvogteiplatz 5-7 10117 Berlin, Germany

	09:30	DS 3.1	Switching kinetics of VCM-based resistive memories at ultrafast time scales — •Moritz von Witzleben, Viktor Havel, Karsten Fleck, Andreas Kindsmüller, Rainer Waser, Stephan Menzel, and Ulrich Böttger
	09:45	DS 3.2	Memsensors: How to design devices with enhanced capabilities in neuromorphic engineering — •Alexander Vahl, Jürgen Carstensen, Sören Kaps, Oleg Lupan, Thomas Strunskus, Rainer Adelung, and Franz Faupel
	10:00	DS 3.3	Defect Investigation of CuBi2O4 Photocathodes for Solar Water Splitting — •Michael Sahre, Marlene Lamers, Matthias Müller, Fatwa F. Abdi, and Roel van de Krol
	10:15	DS 3.4	A pulsed laser deposition technique to control the composition of ternary thin films in growth direction demonstrated on the MgxZn1−xO alloy — •Max Kneisz, Philipp Storm, Gabriele Benndorf, Holger von Wenckstern, and Marius Grundmann
	10:30	DS 3.5	Considerations in the Stability of Multicomponent Oxide Alloys — •Christopher Sutton, Robert J.N. Baldock, Luca M. Ghiringhelli, and Matthias Scheffler
	10:45	DS 3.6	Influence of nitrogen annealing on the properties of spray pyrolysis grown In-doped ZnO thin films — Dilawar Ali, Muhammad Z. Butt, David Caffrey, Igor V. Shvets, and •Karsten Fleischer
	11:00	DS 3.7	Modulation of the In2O3 surface electron transport properties by acceptor doping — •Alexandra Papadogianni, Julius Rombach, Theresa Berthold, Stefan Krischok, Marcel Himmerlich, and Oliver Bierwagen
	11:15		15 min. break.
	11:30	DS 3.8	Confining memristive filaments in TiO2 thin films by Au nanoparticles — •Christian Rodenbücher, Nabeel Aslam, Dominik Wrana, Hehe Zhang, Hongchu Du, Michael Prömpers, Dirk Mayer, and Susanne Hoffmann-Eifert
	11:45	DS 3.9	Epitaxial Stabilization of NbO2 on TiO2(110) — •Jos Emiel Boschker, Saud Bin Anooz, Benjamin Kalas, Toni Markurt, Manfred Ramsteiner, Sverre Vegard Pettersen, Jostein Kvaal Grepstad, Martin Albrecht, Péter Petrik, and Jutta Schwarzkopf
	12:00	DS 3.10	Characterization of the dielectric function of RScO3 type scandates — •Sergey Kuznetsov, Martin Feneberg, and Rüdiger Goldhahn
	12:15	DS 3.11	Ferro- and antiferroelectricity in oxygen defficient hafnia and zirconia — •Konstantin Z. Rushchanskii, Stefan Blügel, and Marjana Ležaić
	12:30	DS 3.12	The contribution has been withdrawn.
	12:45	DS 3.13	Room temperature fabricated all-oxide junction field-effect transistors and inverters on rigid and flexible substrates — •Peter Schlupp, Sofie Vogt, Holger von Wenckstern, and Marius Grundmann
	13:00	DS 3.14	Surface hole accumulation layer in NiO created by oxygen plasma treatment — •Melanie Budde, Carsten Tschammer, Theresa Berthold, Marcel Himmerlich, Stefan Krischok, and Oliver Bierwagen