Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 3: Oxide Semiconductors for Novel Devices (Focussed Session): Session I
DS 3.1: Vortrag
Montag, 12. März 2018, 09:30–09:45, E 020
Switching kinetics of VCM-based resistive memories at ultrafast time scales — •Moritz von Witzleben1, Viktor Havel1, Karsten Fleck1, Andreas Kindsmüller1, Rainer Waser1,2, Stephan Menzel2, and Ulrich Böttger1 — 1Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, 52064 Aachen, Germany — 2Peter Grünberg Institut (PGI 7), Forschungszentrum Jülich, 52425 Jülich, Germany
Redox-based resistive memories (ReRAM) are likely to overcome the challenges that nowadays memories are facing as they show auspicious properties regarding switching times, scaling, retention and endurance. For their application, fast switching times are mandatory for the writing process whereas their resistive state must be retained during many read-out operations. This issue is known as voltage-time dilemma and can be overcome by an extremely nonlinear correlation between the switching time and the applied voltage. Therefore, the switching kinetics of Pt/Ta2O5/Ta and Pt/ZrO2/Ta VCM cells are measured over almost 15 orders of magnitude between 104 s and 120 ps. The ReRAM cells were incorporated in coplanar waveguide (CPW) structures to provide proper impedance matching at the contact surfaces. Our results indicate that the voltage-time dilemma can be addressed with VCM cells. Furthermore, the switching kinetics at time scales below 10 ns are not limited by conduction mechanisms or electrochemical reactions in the oxide layer or at its interfaces, but RC times play a decisive role due to the capacities of the CPW structure.