Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 3: Oxide Semiconductors for Novel Devices (Focussed Session): Session I
DS 3.2: Talk
Monday, March 12, 2018, 09:45–10:00, E 020
Memsensors: How to design devices with enhanced capabilities in neuromorphic engineering — •Alexander Vahl1, Jürgen Carstensen2, Sören Kaps2, Oleg Lupan2, Thomas Strunskus1, Rainer Adelung2, and Franz Faupel1 — 1Christian-Albrechts University at Kiel, Institute for Materials Science, Chair for Multicomponent Materials, Kaiserstr. 2, 24143, Kiel, Germany — 2Christian-Albrechts University at Kiel, Institute for Materials Science, Chair for Functional Nano Materials, Kaiserstr. 2, 24143 Kiel, Germany
Memsensors are a class of devices combining resistive switching and sensing properties. Apart from their inherited properties, pinched I-V hysteresis and stimulus dependent resistivity, memsensors have the capability to adapt to an external stimulus. This adaptation shows striking similarities to adaptation in biological neuronal systems, making memsensors ideal candidates for applications in neuromorphic engineering. In addition, the resistive switching is strongly dependent on the external stimulus. We propose a simple equivalent circuit containing two memristors, one in parallel and one in series to a linear sensor. This model allows to understand a multitude of experimental findings and implies a large predictive power for further optimization of memsensing devices and their application in neuromorphic engineering. Based on the model and experimental findings we propose design rules for memsensors that will facilitate further research on memsensitive systems.