Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 3: Oxide Semiconductors for Novel Devices (Focussed Session): Session I
DS 3.6: Talk
Monday, March 12, 2018, 10:45–11:00, E 020
Influence of nitrogen annealing on the properties of spray pyrolysis grown In-doped ZnO thin films — Dilawar Ali1,2, Muhammad Z. Butt1, David Caffrey2, Igor V. Shvets2, and •Karsten Fleischer2 — 1Department of Physics and Centre for Advanced Studies in Physics, GC University Lahore-54000, Pakistan — 2School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Ireland
The properties of a low cost transparent conducting oxide (TCO) – spray pyrolysis grown ZnO thin films doped with indium have been investigated. We analyze the optical, electrical, and crystallographic properties as function of In content with a specific focus on post-growth heat treatment of these thin films at 320∘C in an inert, nitrogen atmosphere, which remarkably improves the films electrical properties. The effect was found to be dominated by nitrogen induced grain boundary passivation, identified by a combined study using in-situ resistance measurement upon annealing, X-ray photoelectron spectroscopy, photoluminescence and X-ray diffraction studies. We also highlight the chemical mechanism of morphologic and crystallographic changes found in films with high indium content. In optimized growth and post-annealing conditions, ZnO:In with a resistivity as low as 2×10−3 Ωcm and high optical quality has been obtained using low cost spray pyrolysis.