Berlin 2018 – scientific programme

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DS: Fachverband Dünne Schichten

DS 3: Oxide Semiconductors for Novel Devices (Focussed Session): Session I

DS 3.8: Talk

Monday, March 12, 2018, 11:30–11:45, E 020

Confining memristive filaments in TiO₂ thin films by Au nanoparticles — •Christian Rodenbücher¹, Nabeel Aslam¹, Dominik Wrana^1,2, Hehe Zhang¹, Hongchu Du¹, Michael Prömpers¹, Dirk Mayer¹, and Susanne Hoffmann-Eifert¹ — ¹Forschungszentrum Jülich, ER-C, ICS, PGI, and JARA-FIT — ²Jagiellonian University, Institute of Physics, Krakow

The memristive effect in transition metal oxides has attracted much attention promising the design of fast non-volatile and energy-efficient memory devices which additionally would offer the opportunity of hardware-based neuromorphic computing. On the nanoscale, the underlying resistive switching effect was found to be related to conducting filaments evolving during an initial electroforming step. In order to improve the performance of the memristive devices, a control of the filament formation is of high importance. Here, we follow the approach of introducing Au nanoparticles at the Pt/TiO₂ interface of ALD-grown films. Using local-conductivity atomic force microscopy (LC-AFM) we show that the conductivity through the TiO₂ above the nanoparticles is significantly higher than above the surrounding Pt-coated substrate which can be attributed to the different material properties of the two metals (here Au and Pt) forming the interface to the oxide layer. Hence, Au nanoparticles can be used to determine the position of conducting paths as origin for filament formation on the nanoscale. We employ this effect to build up Pt/TiO₂/Pt nanocrossbar devices with embedded Au nanoparticles showing enhanced switching characteristics with significantly reduced forming voltage.