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DS: Fachverband Dünne Schichten

DS 3: Oxide Semiconductors for Novel Devices (Focussed Session): Session I

DS 3.9: Vortrag

Montag, 12. März 2018, 11:45–12:00, E 020

Epitaxial Stabilization of NbO₂ on TiO₂(110) — •Jos Emiel Boschker¹, Saud Bin Anooz^1,2, Benjamin Kalas³, Toni Markurt¹, Manfred Ramsteiner⁴, Sverre Vegard Pettersen⁵, Jostein Kvaal Grepstad⁵, Martin Albrecht¹, Péter Petrik³, and Jutta Schwarzkopf¹ — ¹Leibniz Institute for Crystal Growth, Max-Born-Str. 2, Berlin, D-12489, Germany — ²Physics Department, Faculty of Science, Hadhramout University, Mukalla, 50511, Yemen — ³Institute of Technical Physics and Materials Science, Konkoly-Thege Rd. 29-33, 1121 Budapest, Hungary — ⁴Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, Berlin, D-10117, Germany — ⁵Department of Electronic Systems, Norwegian University of Science and Technology, Trondheim, Norway

Niobium oxides have promising physical properties that can be exploited in electronic devices, such as selector and memory devices. Moreover, NbO₂ has attracted considerable scientific interest, as it exhibits a semiconductor-metal transition at 1080K. However, the lack of high quality material complicates fundamental studies of their properties. In this paper, we report on the epitaxial stabilization of NbO₂ thin films grown on TiO₂ substrates by pulsed laser deposition. The anisotropic properties of films grown at different substrate temperatures were determined by various structural and optical methods. The results indicate a phase transition from the rutile structure to a distorted rutile structure with decreasing substrate temperature.