Berlin 2018 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 31: Poster Session II

DS 31.10: Poster

Thursday, March 15, 2018, 11:15–13:15, Poster F

Texture Optimization of Metastable GeSb₂Te₄ Thin Films — •Hannah Niehaus¹, Matthias M. Dück¹, Stefan Jakobs¹, and Matthias Wuttig^1,2 — ¹I. Physikalisches Institut (IA), RWTH Aachen University, D-52056 Aachen, Germany — ²2 JARA-FIT, RWTH Aachen University, Germany

Phase-change materials (PCM) are already established in optical data storage technologies. Currently these materials are also introduced into the market for electronic data storage, since they offer an attractive portfolio of properties. A prominent representative of PCMs is the material GeSb₂Te₄ (GST), whose electronic properties are governed by disorder-induced effects. GST exists in two different crystalline phases: a rocksalt-like metastable structure and a stable hexagonal one, which is obtained at higher annealing temperatures. Furthermore, this material undergoes a metal-to-insulator transition (MIT) independent of this structural transition. In this study we optimize the texture of GST thin films in the metastable phase in order to enable the investigation of the influence of atomic disorder on the electrical behavior. The material is deposited via sputter deposition on various substrates. In the optimization process parameters such as gas pressure, temperature and power are varied. The structure and quality of the thin films are characterized by x-ray reflectivity (XRR) and diffraction (XRD) as well as atomic force microscopy (AFM). The texture of GST thin films was optimized successfully which now allows systematic investigations of the influence of disorder on the MIT.