Berlin 2018 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 31: Poster Session II

DS 31.22: Poster

Thursday, March 15, 2018, 11:15–13:15, Poster F

Structural study of GaN nanostructures and thin films prepared by energy and mass selective ion-beam assisted MBE — •Andriy Lotnyk, Sören Herath, Philipp Schumacher, Michael Mensing, Jürgen W. Gerlach, and Bernd Rauschenbach — Leibniz Institute of Surface Engineering (IOM), Permoserstr. 15, 04318 Leipzig, Germany

GaN is a widely used semiconductor material for optoelectronic applications. In this work, GaN nanostructures and thin films were produced on 6H-SiC(0001) and Al2O3(1-102) substrates by using a system for energy and mass selective ion-beam assisted molecular-beam epitaxy (IBA-MBE). The nanostructures were produced in two steps. In the first step of the deposition process, Ga-droplets were deposited on 6H-SiC at elevated temperatures. In the second step, a post-nitridation process of Ga droplets by either monoatomic or polyatomic, hyperthermal nitrogen ions was used for the synthesis of GaN nanostructures. The characterization of GaN nanostructures by aberration-corrected scanning transmission electron microscopy showed the formation of cubic GaN. The detailed structural investigation revealed different types of defects forming during the growth of nanostructures. The results on microstructure of GaN thin film will be also presented and the influence of ion energies on the real structure of GaN nanostructures and thin films will be discussed.