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DS: Fachverband Dünne Schichten
DS 31: Poster Session II
DS 31.2: Poster
Donnerstag, 15. März 2018, 11:15–13:15, Poster F
Understanding and controlling the growth of carbon nanowalls — •Sebastian Tigges1,2, André Giese1, Axel Lorke1,2, and Nicolas Wöhrl1,2 — 1Universität Duisburg-Essen, Faculty of Physics, 47057 Duisburg, Germany — 2Center for Nanointegration Duisburg-Essen, 47057 Duisburg, Germany
Carbon nanowalls (CNWs) exhibit exceptional thermal as well as electrical conductivity. Their surface area may be controlled simply by adjusting process parameters. This makes them especially attractive for application in sensors and energy technology. Extensive research has been undertaken to understand the complex mechanisms contributing to the growth of CNWs. The most important challenge is proper understanding of growth mechanisms to directly control morphology/structure. Here, we investigate the different CNW structures that are obtained by tuning process parameters such as temperature, substrate bias, flow rate of precursor gas, and pressure in our inductively coupled plasma enhanced CVD system. CNW structures of varying height, inter-wall distance and morphology are obtained. They are characterized and distinguished via scanning electron microscopy and Raman spectroscopy. Plasma characterization is done by optical emission spectroscopy and quadrupole mass spectrometry. Particularly Raman spectroscopy shows important variation in both defect density and defect type. Furthermore formation of different CNW structures is observed, which changes with residual time of the complex precursor molecule used as carbon source. This way a simple growth model is derived.