Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 31: Poster Session II
DS 31.3: Poster
Thursday, March 15, 2018, 11:15–13:15, Poster F
Influence of O2/N2 Gas Compositions on PECVD deposited Silicon Oxide Films — •Philipp Moritz1,2, Simon Homann1,2, Lisa Wurlitzer1,2, and Wolfgang Maus-Friedrichs1,2 — 1Institute of Energy Research and Physical Technologies, Clausthal University of Technology, Leibnizstr. 4, 38678 Clausthal-Zellerfeld — 2Clausthal Centre of Material Technology, Clausthal University of Technology, Agricolastr. 2, 38678 Clausthal-Zellerfeld
Plasma enhanced chemical vapor deposition (PECVD) is an established process to deposit solid coatings. We used PECVD with a tetraethyl orthosilicate (TEOS) precursor to coat titanium substrates with silicon oxide. In order to this the substrate was exposed to TEOS with a carrier gas mixture of O2 and N2. For the experiments a dielectric barrier discharge plasma was used under atmospheric pressure. It causes a reaction of the TEOS to form a solid film of silicon oxide.
To optimize the stoichiometry and morphology of the deposited coating the gas composition of O2 and N2 is varied. The total gas flow is kept constant. Investigations with X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) show significant differences in the stoichiometry and morphology of the coatings dependent on the gas composition.