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DS: Fachverband Dünne Schichten
DS 31: Poster Session II
DS 31.4: Poster
Donnerstag, 15. März 2018, 11:15–13:15, Poster F
Preparation and characterisation of carbon-free Cu(111) films on sapphire for graphene synthesis — •Jan Lehnert, Daniel Spemann, M.Hamza Hatahet, Michael Mensing, Christoph Gruner, Patrick With, Philipp Schumacher, Annemarie Finzel, Dietmar Hirsch, and Bernd Rauschenbach — Leibniz Institute of Surface Engineering (IOM), Leipzig, Germany
This work presents an investigation of unwanted carbon formed on polycrystalline Cu(111) thin films. The goal is to obtain carbon-free Cu films as a substrate for controlled graphene synthesis. Cu films were prepared by ion beam sputtering at room temperature on c-plane Al2O3. These films had been thermally treated in a temperature range between 300 and 1020 ∘C. The crystallinity of the Cu films was studied by XRD and RBS/channeling and the surface was characterised by Raman spectroscopy, XPS and AFM for each annealing temperature. RBS measurements revealed the diffusion of the Cu into the Al2O3 substrate at high temperatures of >800 ∘C. Furthermore, a cleaning procedure using UV ozone treatment is presented to remove the carbon contamination from the surface which yields essentially carbon-free Cu films that open the possibility to synthesise graphene with controlled number of graphene layers. On these Cu substrates, graphene was synthesised by carbon ion implantation and subsequent annealing. These graphene layers were transferred to a SiO2/Si waver using a standard wet-chemistry approach. Raman and AFM measurements were performed to investigate the quality of the transferred graphene layers.