Berlin 2018 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 35: Lithography IV: Lithography and Structuring (joint session KFM/DS)

Donnerstag, 15. März 2018, 15:00–18:10, EMH 025

This second lithography session focuses mainly on the application of advanced methods for quantum applications and the fabrication of lower dimensional systems. With the mass production of transistors devices at the 10 nm level with transmissive optical masks and with extreme UV reflective masks being at the horizon for mass fabrication, the industrial photomask fabrication is currently facing a significant technology transition and new technology requirements needed to keep pace with. The session also looks into those industrial challenges. Finally, the session focuses on important characterization methods required for the above mentioned state-of-the art lithography methods and their characterization.

Organizer: Robert Kirchner - Technische Universität Dresden

	15:00	DS 35.1	Hauptvortrag: Electron Beam Lithography and Ion Beam Patterning for Applications in Quantum Technology — •Jörg Stodolka, Michael Kahl, Axel Rudzinski, and Sven Bauerdick
	15:30	DS 35.2	Technology for fabrication of suspended sub-5 nm silicon nanowires and applications thereafter — Nikolay Petkov, Dipjyoti Deb, Muhammad Bilal Khan, Artur Erbe, and •Yordan M. Georgiev
	15:50	DS 35.3	Photomask Manufacturing Technology - An Overview — •Christian Buergel, Torben Heins, and Martin Sczyrba
	16:10	DS 35.4	Simulation of Ion Beam induced Surface Dynamics — •Alrik Stegmaier and Hans Hofsäss
	16:30		20 min. break
	16:50	DS 35.5	NFFA-Europe: enhancing European competitiveness in nanoscience research and innovation — •Dimitrios Kazazis
	17:10	DS 35.6	Fresnel-Mirror-Setup for Interference Lithography — •Arrigo Facchini, Bodo Fuhrmann, Hartmut S. Leipner, Georg Schmidt, and Roland Scheer
	17:30	DS 35.7	Analysis of rough nanostructured surfaces by EUV-scatterometry — •Analía Fernández Herrero, Frank Scholze, and Victor Soltwisch
	17:50	DS 35.8	GISAXS reconstruction of profiles of gratings produced by quadruple patterning — •Mika Pflüger, Victor Soltwisch, R. Joseph Kline, Frank Scholze, and Michael Krumrey