Berlin 2018 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 35: Lithography IV: Lithography and Structuring (joint session KFM/DS)

DS 35.1: Hauptvortrag

Donnerstag, 15. März 2018, 15:00–15:30, EMH 025

Electron Beam Lithography and Ion Beam Patterning for Applications in Quantum Technology — •Jörg Stodolka, Michael Kahl, Axel Rudzinski, and Sven Bauerdick — Raith GmbH, Dortmund, Germany

Electron Beam Lithography and Ion Beam Patterning allow to fabricate structures with nm resolution and accuracy, which is required for many devices based on quantum technology. After a general overview we present two specific applications.

First, we show an approach for a deterministic realization of photonic devices with very high process yield utilizing cathodoluminescence spectroscopy (CL) in combination with electron beam lithography: An electron beam is used to write nanopatterns in resist at positions that are preselected by local generation of light detected by CL.

Second, we present a method for scalable and maskless fabrication of silicon vacancy (VSi) defect arrays in silicon carbide using focused ion beam. The photoluminescence spectrum and optically detected magnetic resonance of the generated defect spin ensemble are used to analyze the synthesized centers and their desired defect state. The reliable production of VSi defects with a dedicated focused ion beam system allowing single ion implantation could pave the way for applications in quantum photonics and quantum information processing.