Berlin 2018 –
wissenschaftliches Programm
DS 5: Layer Deposition (ALD, MBE, Sputtering, ...)
Montag, 12. März 2018, 11:45–13:15, H 0111
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11:45 |
DS 5.1 |
Atomic Layer Deposition of Titanium Nitride Thin Films for Plasmonic Applications — •Gül Dogan, Umut T. Sanli, Gisela Schütz, and Kahraman Keskinbora
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12:00 |
DS 5.2 |
Atomic Layer Deposition of Iridium: Nucleation and Film Growth — •Paul Schenk and Adriana Viorica Szeghalmi
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12:15 |
DS 5.3 |
Energy and mass selective ion beam assisted epitaxy for deposition of thin nitride films — •Philipp Schumacher, Michael Mensing, Jürgen W. Gerlach, Stephan Rauschenbach, and Bernd Rauschenbach
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12:30 |
DS 5.4 |
Modifying the texture of epitaxially grown chalcogenide thin films — •Marc Pohlmann, Marvin Kaminski, and Matthias Wuttig
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12:45 |
DS 5.5 |
Deposition-Flux dependent Intrinsic Film Stress: Scaling — •Marcel Rost, Andreas Jamnig, Clarisse Furgeaud, and Gregory Abadias
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13:00 |
DS 5.6 |
Aluminum nitride films prepared by plasma atomic layer deposition using different plasma sources — Małgorzata Kot, Franziska Naumann, Samiran Garain, Emilia Poźarowska, Hassan Gargouri, •Karsten Henkel, and Dieter Schmeißer
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