Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 5: Layer Deposition (ALD, MBE, Sputtering, ...)
DS 5.2: Vortrag
Montag, 12. März 2018, 12:00–12:15, H 0111
Atomic Layer Deposition of Iridium: Nucleation and Film Growth — •Paul Schenk1,2 and Adriana Viorica Szeghalmi1,2 — 1Fraunhofer-Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Straße 7, D-07745 Jena, Germany — 2Friedrich-Schiller-University Jena, Institute of Applied Physics, Albert-Einstein-Straße 15, D-07745 Jena, Germany
Ultrathin and smooth metal films are essential for numerous optical systems for spectroscopy and sensing in material, life sciences and astronomy, lightning or automobile components, and other applications. Complex shaped substrates or nano- and microstructured components are increasingly necessary in modern applications. However, the conformal deposition of thin metal layers on such elements, using established coating technologies such as physical vapor deposition (PVD), is challenging. In contrast, atomic layer deposition (ALD) is a highly suitable coating technology for the uniform deposition of thin films onto complex shaped surfaces.
Iridium thin films are of interest for applications in broadband metal wire grid polarizers, mirrors and Fresnel zone plates, or even for medical implants. It is essential to control their morphology and topography as well as the mechanical and optical properties to enable components with a high performance. Therefore, one needs to understand the layer growth from the initial nucleation to the formation of a dense and compact thin metal film. In the presented work, we studied the nucleation and film growth of iridium thin films on various substrate materials with regard to their morphology and properties.