Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 5: Layer Deposition (ALD, MBE, Sputtering, ...)
DS 5.6: Vortrag
Montag, 12. März 2018, 13:00–13:15, H 0111
Aluminum nitride films prepared by plasma atomic layer deposition using different plasma sources — Małgorzata Kot1, Franziska Naumann2, Samiran Garain1, Emilia Poźarowska1, Hassan Gargouri2, •Karsten Henkel1, and Dieter Schmeißer1 — 1Angewandte Physik - Sensorik , Brandenburgische TU Cottbus-Senftenberg, K.-Wachsmann-Allee 17, 03046 Cottbus, Germany — 2SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin, Germany
Aluminum nitride (AlN) thin films are promising for versatile applications in optoelectronics, electronics, piezoelectrics, and acoustics due to their remarkable properties such as wide band gap, high dielectric constant, low electrical conductivity, good piezoelectric coefficient and high ultrasonic velocity. We present a comparative study of AlN films grown by plasma-enhanced atomic layer deposition at 350∘C silicon wafers in the SENTECH SI ALD LL system using TMA and NH3 where either a capacitively coupled plasma (CCP) or a direct PTSA (planar triple spiral antenna) source was applied. The films were characterized by ellipsometry, XPS and electrical measurements. The layer properties are discussed concerning the varied ALD process parameters. In general, the process using the direct PTSA source delivered films with higher refractive index and better homogeneity over the wafer achieving also higher growth rates per cycle (GPC) in reduced total cycle durations. Films with refractive index in the range of 2.05 and permittivity around 8 could be realized with a GPC of 1.54 Å/cycle.