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DS: Fachverband Dünne Schichten
DS 6: Thin Film Applications
DS 6.12: Vortrag
Montag, 12. März 2018, 18:00–18:15, H 0111
Modelling of the vertical deflection of ferroelectric bending tongues — •Juliette Cardoletti1, Aldin Radetinac1, Julian Walker2, Philipp Komissinskiy1, Susan Trolier-McKinstry2, and Lambert Alff1 — 1Technische Universität Darmstadt, Institute of Materials Science, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany — 2Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, USA
With the acute need for miniaturisation of devices and components, the use of bending tongues (cantilevers or wider beams) based on piezoelectric ceramics is increasing. Due to its large piezoelectric coefficient, PbZr0.52Ti0.48O3 (PZT) is the most commonly used material, but it is also ferroelectric (i.e. the polarisation direction can be switched between discrete crystallographically allowable orientations by an external electric field). This particularity should be taken into account when modelling the vertical deflection of bending tongues.
To date, bending tongue based devices have been modelled from a static and dynamic point of view without simulating the ferroelectric switching occurring in grains [1]. However, various papers attempted to describe ferroelectric switching based on different approaches, for example based on a switching criterion accounting for mechanical work and electrical work contributions to the switching process [2].
The here described modelling program, based on Hwang’s switching criterion [2], aims to bridge the gap between the previous approaches by describing the vertical deflection of a bending tongue while taking into account ferroelectric switching at the grain scale.