Berlin 2018 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 8: 2D materials (joint session HL/DS)

DS 8.5: Vortrag

Montag, 12. März 2018, 16:00–16:15, EW 201

Spin- and valley-dependent transport through a 2D semiconductor with magnetic substrate — •Gerhard Fechteler, Andor Kormányos, and Guido Burkard — University of Konstanz, Germany

Motivated by recent theoretical [1] and experimental [2,3] works, we study spin- and valley-dependent electron scattering in monolayers of transition metal dichalcogenides through a region with an underlying magnetic substrate. The valley splitting and changes in the parameters such as Fermi velocity and effective electron mass induced by the magnetic substrate lead to novel spin- and valley selection possibilities compared to gated structures [4]. Neglecting Rashba spin-orbit coupling (SOC), we study the Fermi energy and incident angle dependence of spin and valley selective scattering processes. Moreover, we find pronounced and tuneable Goos-Hänchen shifts. In the presence of Rashba SOC, we find that the transmitted and reflected electron beams are split due to spin mixing in the scattering region. Such a spin-dependent scattering can prove useful for the design of novel spintronic devices. [1] J. Qi et al., Phys. Rev. B 92, 121403 (2015). [2] C. Zhao et al., Nat. Nanotechnol. 12, 757-760 (2017). [3] D. Zhong et al., Sci. Adv. 3, e1603113 (2017). [4] H. Ghadiri et al., J. Phys.: Condens. Matter 29, 115303 (2017).