Berlin 2018 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 10: Nitrides: Devices

HL 10.4: Vortrag

Montag, 12. März 2018, 15:45–16:00, EW 203

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire — •Norman Susilo¹, Sylvia Hagedorn², Dominik Jaeger³, Hideto Miyake⁴, Ute Zeimer², Christoph Reich¹, Bettina Neuschulz¹, Luca Sulmoni¹, Martin Guttmann¹, Frank Mehnke¹, Christian Kuhn¹, Tim Wernicke¹, Markus Weyers², and Michael Kneissl^1,2 — ¹Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany — ²Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany — ³Evatec AG, Hauptstraße 1a, 9477 Trübbach, Switzerland — ⁴Department of Electrical and Electronic Engineering, Mie University, Mie 514-8507, Japan

The structural and electro-optical properties of AlGaN-based deep ultraviolet light emitting diodes (UV-LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature annealed (HTA) AlN/sapphire templates are investigated and compared to LEDs grown on epitaxially laterally overgrown (ELO) AlN/sapphire. Both templates show similar threading dislocation densities in the range of 1×10⁹ cm⁻². The output powers are also comparable and in the range of 0.4 mW at 20 mA for the emission wavelength of 268 nm. This opens a new way for the fabrication of efficient UVC-LEDs with reduced complexity and thus reduced costs.