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Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 10: Nitrides: Devices

HL 10.7: Talk

Monday, March 12, 2018, 16:45–17:00, EW 203

Transport of localized charge carriers in disordered mediaJean-Marie Lentali1, Marcel Filoche1, and •Svitlana Mayboroda21Physique de la Matière Condensée, Ecole Polytechnique, CNRS, 91128 Palaiseau, France — 2School of Mathematics, University of Minnesota, Minneapolis, Minnesota 55455, USA

Our work is based on the theory of the localization landscape, which purpose is to study the effects of disorder on the localization of wave functions without actually solving the Schrödinger equation. Bypassing the Schrödinger equation notably allows 3D computations, self-consistent with the Poisson equation and the drift-diffusion transport equations. This new approach has been successfully applied to nitride based structures such as InGaN quantum wells, where the disorder stems from the random distribution of Indium atoms during growth process [1]. However, the transport between localized states in the plane of the well could only be described by an effective mobility, until recently. We now propose a dynamic transport model which integrates the coupling between neighboring localized states by an external potential such as the electric field and/or the phonon-electron interaction. Evaluating this coupling requires the use of the Agmon distance, which describes the exponential decay of localized wave functions in any dimension, and we report its first utilization in quantum physics.

[1] Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes Chi-Kang Li, et al. - Phys. Rev. B 95, 144206 - Published 18 April 2017

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