Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 10: Nitrides: Devices
HL 10.8: Talk
Monday, March 12, 2018, 17:00–17:15, EW 203
Electronic processes in nitride compounds and devices — Wiebke Hahn1, Jean-Marie Lentali1, James S. Speck2, Claude Weisbuch1,2, Marcel Filoche1, Lucio Martinelli1, and •Jacques Peretti1 — 1Laboratoire de Physique de la Matière Condensée, Ecole polytechnique, CNRS, Université Paris-Saclay, 91128 Palaiseau, France — 2Materials Department, University of California, Santa Barbara, CA, USA
Despite the fast development of nitride semiconductor technology, a deep understanding of the fundamental properties of nitride compounds and heterostructures is still lacking in order to understand the microscopic mechanisms which govern electronic processes in nitride devices. Here, we present unconventional approaches which allow to address challenging issues like multivalley transport [1,2], non-radiative recombination processes [1], disorder-induced localization effects [3-5]. Direct spectroscopic signatures of critical electronic processes are obtained which provide novel inputs both for the theoretical description of nitride compounds and heterostructures and for the modeling and design of devices [6]. [1] Iveland et al., Phys. Rev. lett. 110, 177406 (2013) [2] Piccardo et al., Phys. Rev. B 89, 235124 (2014) [3] Filoche et al., Phys. Rev. B 95, 144204 (2017) [4] Piccardo et al., Phys. Rev. B 95, 144205 (2017 [5] Li et al., Phys. Rev. B 95, 144206 (2017) [6] Hahn et al., Submitted.