Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 10: Nitrides: Devices
HL 10.9: Talk
Monday, March 12, 2018, 17:15–17:30, EW 203
Q factor limitation in the UVA in III-nitride-on-silicon photonic crystal cavities — •Farsane Tabataba-Vakili1,2,3, Iannis Roland1, Thi-Mo Tran1, Xavier Checoury1, Moustafa El Kurdi1, Sébastien Sauvage1, Christelle Brimont4, Thierry Guillet4, Stéphanie Rennesson5, Jean-Yves Duboz5, Fabrice Semond5, Bruno Gayral2,3, and Philippe Boucaud1 — 1C2N, CNRS, Univ. Paris-Sud, Université Paris-Saclay, F-91405 Orsay, France. — 2CEA, INAC-PHELIQS, F-38000 Grenoble, France. — 3Univ. Grenoble Alpes, F-38000 Grenoble, France. — 4Laboratoire C. Coulomb (L2C), CNRS-Univ. Montpellier, F-34095 Montpellier, France. — 5Université Côte d'Azur, CRHEA-CNRS, F-06560 Valbonne, France.
In this work, we investigated L3 photonic crystal (PhC) cavities that were fabricated in a 75 nm AlN layer, containing five 1.2 nm GaN QWs. The III-N PhC membranes were released by selective underetching of the Si substrate. The devices were probed by room temperature micro-photoluminescence to measure the Q factor of the cavities. We demonstrate resonances down to 315nm and Q factors up to 1085 at 337nm. Using spectroscopic ellipsometry, we determine residual absorption in thin AlN layers grown on Si by molecular beam epitaxy. This residual absorption is expected to be the main cause of substantially decreased Q factors at shorter wavelengths when no active layers with a large absorption, such as quantum wells or quantum dots are present. Ultimately, the residual absorption should thus limit the Q factor to 2000 at 300 nm when no active layers are present.