Berlin 2018 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 13: Poster Session I

HL 13.15: Poster

Montag, 12. März 2018, 17:30–19:30, Poster B

Electroluminescence in strain-reduced MoSe2 monolayer p-n-junctions — •Georg Winkens¹, Jhih-Sian Tu¹, Thomas Grap², Joachim Knoch^2,3, Detlev Grützmacher¹, and Beata Kardynal^1,3 — ¹Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, Germany — ²Institute of Semiconductor Electronics, RWTH Aachen University — ³JARA - Fundamentals of Future Information Technology, RWTH Aachen University, Germany

P-n junctions are one of the fundamental elements of modern semiconductor devices, such as diodes, LEDs, transistors and photodetectors. Doping needed to form p-n junctions in monolayers of transition metal dichalcogenides (TMD MLs) is proving difficult, while strong interest in this class of material has been fueled by their unique properties which could lead to new applications. The strong spin-orbit interaction combined with favourable optical selection rules makes them extremely interesting for opto-spintronics and valleytronics. A shift of the electrochemical potential in TMD MLs can be achieved by the use of local gating instead of dopants, allowing very flexible manipulation of doping levels and thus fabrication of complex devices. In this presentation we will compare two alternative designs of devices based on local gating, both aiming at eliminating strain from the TMD monolayers in the patterned devices. While one relies on preparing van der Waals heterostructures, the second makes use of substrates with buried tungsten gates. We will compare the two designs by characterizing MoSe2 ML light emitting diodes.