Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 13: Poster Session I

HL 13.17: Poster

Montag, 12. März 2018, 17:30–19:30, Poster B

Resonant Raman scattering on few layer MoSe₂ — •Sebastian Meier, Philipp Nagler, Andreas Hecht, Tobias Korn, and Christian Schüller — Universität Regensburg, 93040 Regensburg, Germany

We perform resonant Raman scattering to look for electronic scattering mechanisms in MoSe₂. Our samples are prepared by mechanical exfoliation and transferred to a Si/SiO₂ substrate. Using a Ti:Sapphire laser, we can tune the excitation energy across the whole region of excitonic transitions at the K and K’ points in MoSe₂. This allows us to record the detailed resonance behaviour of known phonon modes as well as to look for new peaks in the low-energy region. Such measurements were done for room temperature and at T=4   K.

For both temperatures, a new peak is observed on few-layer samples, which we can not explain by phonon scattering. It is located at very low wavenumbers and appears only at extremely resonant excitation. We then investigate the properties of this peak by changing the electrostatic environment of our samples.