Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 13: Poster Session I
HL 13.19: Poster
Montag, 12. März 2018, 17:30–19:30, Poster B
Synthesis and characterization of graphite oxide based ink for printed transistors — •Tessy Theres Baby1, Abhinav Chandresh1,2, Surya Abhishek Singaraju1, Ben Breitung1, and Horst Hahn1,3 — 1Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344 Eggenstein-Leopoldshafen, Germany — 2Christian-Albrechts-University of Kiel, Kaiserstrasse 2, 24143 Kiel, Germany — 3KIT-TUD Joint Research Laboratory Nanomaterials, Institute of Materials Science, TU Darmstadt, Petersenstr. 32, 64287 Darmstadt, Germany
Graphene, the one atom thick layer of carbon, is ideally suited for numerous electronic applications on account of its high conductivity, carrier concentration and extraordinary mobility (15,000 cm2 V-1s-1). However, the absence of an electronic band gap has been an impediment in realizing graphene based devices. Therefore, the aim of this work is to synthesize graphite oxide/graphene oxide (GO) with tunable electronic properties at variable temperatures. We have followed the well know Hummer's method to synthesize good quality GO. Acid functionalization has been carried out to obtain stable dispersions with tailored morphology. Finally, in the course of fabricating field-effect devices, a printable (ink-jet) grade of nanoink consisting of GO has been prepared. In order to preserve the electronic properties, no surfactants or additives have been added. Relatively low temperature was used to process the devices. Electrochemically-gated field-effect transistors using composite solid polymer electrolytes have been characterized systematically. Fabricated devices showed p-type behavior.