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HL: Fachverband Halbleiterphysik

HL 13: Poster Session I

HL 13.22: Poster

Montag, 12. März 2018, 17:30–19:30, Poster B

Manipulation of the Environmental Interaction and Optical and Electrical Properties of Single-Layer MoS₂ Transistors — •Philip Klement¹, Christina Steinke², Tim Wehling², Sangam Chatterjee¹, and Martin Eickhoff^1,3 — ¹Institute of Experimental Physics I, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany — ²Institute for Theoretical Physics and Center for Computational Material Sciences, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany — ³Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany

The optical and electrical properties of two-dimensional transition metal dichalcogenides such as MoS₂ exhibit a high sensitivity to their dielectric environment due to their large surface-to-volume ratio and the presence of active surface sites. Further, they offer the possibility of manipulating the Coulomb interaction by electrostatic screening through gaseous species or external electric gating. We studied the underlying interaction mechanism by a variation of the Fermi level and its influence on the adsorption and desorption behavior of oxygen. Photoluminescence and photo-induced channel current measurements show a strong variation of the electrical and optical properties of single-layer MoS₂. A reversible charge carrier transfer between O₂ and MoS₂ is confirmed, and is very sensitive to the density of free carriers. This concept is supported by theoretical calculations.