Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 13: Poster Session I

HL 13.24: Poster

Monday, March 12, 2018, 17:30–19:30, Poster B

Optimization of charge injection into few layered Indium Selenide for high performance logic devices — •Vivek Koladi Mootheri, Phanish Chava, Himani Arora, and Artur Erbe — Helmholtz Zentrum Dresden Rossendorf, Dresden, Germany.

Two-dimensional materials provide the ideal physical basis for field effect devices based on alternative materials and architectures, owing to the absence of interfacial dangling bonds. Indium Selenide (InSe) falls under the III-VI semiconducting layered chalcogenide group of the two-dimensional materials family. Its properties such as high mobility and direct band gap in few layered exfoliated flakes provide a basis for exploring its potential for future electronic/optoelectronic devices. However, the intrinsic superior electronic properties of InSe have not been completely utilized due to inefficient charge injection into the material from the source and drain electrodes. This project thus focuses on optimizing the charge injection with the help of different contacting techniques on few layered InSe flakes. Here we demonstrate the use of few layered graphene to contact hexagonal Boron Nitride (hBN) encapsulated InSe flake and also realize implanted contacts by a focused ion beam. This work hence provides a comparative study of the various contacting approaches used, identifying the most beneficial approach.