Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 13: Poster Session I

HL 13.25: Poster

Monday, March 12, 2018, 17:30–19:30, Poster B

Dielectrically Defined Lateral Heterojunctions in Transition Metal Dichalcogenide Monolayers — •Sven Borghardt¹, Leo Yu², Archana Raja³, Jhih-Sian Tu¹, Detlev Grützmacher¹, Tony F. Heinz^2,4, and Beata E. Kardynal¹ — ¹Peter Grünberg Institute 9, Forschungszentrum Jülich, 52425 Jülich, Germany — ²Department of Applied Physics, Stanford University, Stanford, CA 94305, USA — ³Kavli Energy Nanoscience Institute, University of California, Berkeley, CA 94720 — ⁴SLAC National Accelerator Laboratory, Menlo Park, CA 94025, USA

Heterojunctions (HJs), i.e. the interfaces of two semiconductors with unequal band gaps, are the backbone of established semiconductor technology. Recently, we have demonstrated that both the electronic and optical band gaps of transition metal dichalcogenide monolayers (TMD-MLs) can be manipulated through externally induced dielectric screening. However, to the present date, little is known about exciton dynamics in dielectrically induced lateral HJs.

In order to shed light on exciton dynamics in dielectrically defined lateral HJs, we have prepared TMD-MLs encapsulated with nano-patterned hexagonal boron nitride sheets. Photoluminescence and reflectance measurements with µm-resolution are performed to probe an ensemble of dielectrically defined HJs, with the temperature, charge level and pattern layout as tunable parameters. From these ensemble measurements, we expect to obtain insights into both exciton diffusion and lateral exciton confinement processes in dielectrically induced HJs, paving the way towards well-engineered dielectrically defined devices.