Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 13: Poster Session I
HL 13.28: Poster
Monday, March 12, 2018, 17:30–19:30, Poster B
Intermediate band solar cells - Characterization of transition metal doped indium sulfide — •Ron Hildebrandt1, Tanja Jawinski2, Leonard Wägele2, Holger von Wenckstern1, Roland Scheer2, and Marius Grundmann1 — 1Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Linnéstraße 5, 04103 Leipzig, Germany — 2Martin-Luther-Universität Halle-Wittenberg, Institut für Physik, Von-Dankelmann-Platz 3, 06120 Halle, Germany
The Shockley-Queisser limit for solar cell efficiency of 33.7% is based on a trade-off between generated photocurrent and photovoltage [1]. Intermediate band (IB) solar cells are proposed to overcome this trade-off by an additional two step photon absorption via states within the band gap [2]. Those states may be realized by quantum dots, band anti-crossing in highly mismatched alloys or deep level impurities.
In this work we present a deep level impurity approach for IB solar cells. The heterostructure is p-ZnCo2O4/i-In2S3/n-ZnO:Al with Au contacts on each side. The transition metal doped In2S3 absorber material is deposited by thermal co-evaporation. ZnCo2O4 is deposited by pulsed laser deposition and ZnO:Al by HF-sputtering.
The devices were characterized by current voltage, thermal admittance spectroscopy, photocurrent and transmission measurements, as well as atomic force microscopy. The solar cells showed rectification of 3.5 orders of magnitude and a clear photovoltaic response.
[1] W. Shockley, H. J. Queisser: J. Appl. Phys., 32(3):510-519, 1961.
[2] A. Luque, A. Martí: Phys. Rev. Lett., 78(26):5014-5017, 1997.