Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 13: Poster Session I

HL 13.4: Poster

Montag, 12. März 2018, 17:30–19:30, Poster B

Strain tuning of CVD grown MoS₂ monolayers — •Anna F. Blob¹, Iris Niehues¹, Valentino Jadriŝko², Borna Radatović², Marko Kralj², Steffen Michaelis de Vasconcellos¹, and Rudolf Bratschitsch¹ — ¹Physikalisches Insitut, Universität Münster, Wilhelm-Klemm-Str. 10, 48149 Münster — ²Institute of Physics, Zagreb, Croatia

Single layers of transition metal dichalcogenides are a new class of 2D materials. Mechanical straining makes it possible to change their fundamental optical transitions [1]. We apply reversible uniaxial tensile strain to CVD grown MoS₂ monolayers by bending a flexible polycarbonate substrate on which the ultrathin semiconductor is placed. To avoid slippage of the MoS₂ monolayer, it is covered with a PDMS layer. Absorption spectra of the atomically thin semiconductor are measured for increasing and decreasing strain levels. The energetic shifts of the exciton resonances are determined to be −42 meV/% and −43 meV/% for the A and B exciton, respectively. These gauge factors are in ecxellent agreement with those derived from monolayers exfoliated from naturally occuring molybdenite crystals.

[1] R. Schmidt, I. Niehues, R. Schneider, M. Drüppel, T. Deilmann, M. Rohlfing, S. Michaelis de Vasconcellos, A. Castellanos-Gomez, and R. Bratschitsch, Reversible uniaxial strain tuning in atomically thin WSe₂ in: 2D Materials 3, 021011 (2016)