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HL: Fachverband Halbleiterphysik

HL 13: Poster Session I

HL 13.75: Poster

Montag, 12. März 2018, 17:30–19:30, Poster B

Design and fabrication towards red-emitting AlGaInP based electrically pumped VECSELs — •Michael Zimmer, Zhihua Huang, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart

Electrically pumped external cavity surface emitting lasers (EP-VECSELs) are a new generation of light sources for a wide field of applications, benefiting by the advantage of combining the excellent beam quality of optically pumped VECSELs and the compact size of VCSELs. However, a major challenge in the realization of EP-VECSELs, especially for the short wavelength regime, is to achieve a homogeneous charge carrier distribution within the active region to support the fundamental mode and high power laser output.

In this work, a red-emitting AlGaInP based EP-VECSEL structure is investigated with an electro-thermal numerical model based on the finite element method (FEM). These simulations gave us design proposal where we can achieve a uniform current density distribution. This proposed structure of an EP-VECSEL is grown by metal-organic-vapor-phase-epitaxy (MOVPE) on a GaAs substrate. In this contribution, the fabrication of a flip-chip process is presented and experimentally studied. We are successful to remove the GaAs substrate by wet chemical etching while keeping the heavy doped GaAs contact layer faultless. A fast, smooth and deep mesa etching for GaAs/AlGaAs/AlGaInP materials is also achieved by inductively coupled plasma (ICP) etching.