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HL: Fachverband Halbleiterphysik

HL 17: Focussed Session: Atomic Scale Characterization

HL 17.1: Hauptvortrag

Dienstag, 13. März 2018, 09:30–10:00, EW 202

Quantitative Electron Microscopy for III/V on Silicon integration — •Kerstin Volz — Philipps-Universität Marburg, Department of Physics and Materials Science Center, Marburg, Germany

Integration of active III/V devices on Silicon substrates tremendously increases the functionality of this semiconductor material. In order to realize true monolithic integration, a defect-free nucleation layer is of outmost importance. Moreover, the exact atomic structure of the interface as well as of possible defects, like antiphase domains, is important as they have a decisive impact on charge carrier characteristics and band alignment at the interface. In this presentation several electron microscopic techniques will be explained, which are used to derive not only the quantitative atomic arrangement across a heterointerface, but also the local as well long-range electric field at and across interfaces. These techniques include high angle annular dark field STEM (Scanning Transmission Electron Microscopy), which allows - after appropriate simulation of the scattering process - to gain the three-dimensional quantitative composition. Complementary to this, in 4D STEM a fast pixelated detector is used to obtain information on electric fields. Both techniques, which are operated in an aberration-corrected microscope, will be applied to GaP/Si specimens, grown by metal organic vapour phase epitaxy under highly different conditions, to derive information on the exact structure of interfaces and defects.