Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 17: Focussed Session: Atomic Scale Characterization
HL 17.3: Vortrag
Dienstag, 13. März 2018, 10:30–10:45, EW 202
Atomic Scale Investigation of Near Interface Defects at the SiC/SiO2-Interface: Microscopy, Atom Probe Tomography and Theory — •Dipanwita Dutta1,2, Deb De2, Elisabeth Müller1, Stephan Gerstl3, Stefan Goedecker2, Holger Bartolf5, Jörg Lehmann5, Giovanni Alfieri5, Massimo Camarda1, Adolf Schöner4, and Thomas Jung1,2 — 1Paul Scherrer Institute, Switzerland — 2University of Basel, Switzerland — 3ETH Zürich, Switzerland — 4Ascatron, Kista, Sweden — 5ABB Switzerland Ltd, Corporate Research Baden Dättwil, Switzerland
SiC is in many aspects superior to Si. SiC MOSFETs, however, are compromised by low channel mobilities due to the poor quality of the SiC/SiO2 interface after thermal oxidation, the method of choice for fabrication. Defects occur near the SiC/SiO2 interface due to the complex thermal oxidation process for SiC in comparison to Si which requires removal of carbon in the form of CO and CO2. We identify the most relevant defects for degrading the MOS performance. We analyzed near-oxide defects at different stages of fabrication and passivation by DFT-based theory and by experimental means. Atomic Force Microscopy (AFM), performed after oxide removal, reveals smoother interfaces near N2O passivated oxides as compared to the O2 processed oxides. Raman spectroscopy of the buried interface shows clear evidence for unwanted carbon for the first time. Electron Microscopy and Local Electrode Atom Probe (LEAP) data, will be shown at the conference along with theoretical approaches to explain the carbon-cluster formation.