Berlin 2018 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 17: Focussed Session: Atomic Scale Characterization

HL 17.4: Talk

Tuesday, March 13, 2018, 10:45–11:00, EW 202

A three dimensional structural model of antiphase domains in GaP on Si(001) — •Pascal Farin¹, Malte Marquardt¹, Celina S. Schulze¹, Wjatscheslav Martyanov¹, Andreas Beyer¹, Kerstin Volz², and Andrea Lenz¹ — ¹Technische Universität Berlin, Institute of Solid State Physics, 10623 Berlin, Germany — ²Philipps-Universität Marburg, Materials Science Center, 35032 Marburg, Germany

The integration of III/V-semiconductors on Si(001) has been a long standing research aim to lower the cost of optoelectronic devices and simultaneously improve their performance. Because there is only a small lattice mismatch between Si and GaP, this particular III/V semiconductor is used preferentially. However, due to charged defects called antiphase domains (APDs) in GaP forming at the interface, this has proven to be quite challenging. While the search for growth conditions to avoid their formation has been successful, their exact shape remains unclear. In this work APDs in GaP on Si(001) are investigated by means of cross-sectional scanning tunneling microscopy (XSTM). This method offers unique insight into the appearance of APDs due to its high surface sensitivity. Two perpendicular cross sections of a GaP/Si sample are investigated to develop a three dimensional model for the APDs.
This work is supported by the DFG, project LE 3317/1-2.