Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 17: Focussed Session: Atomic Scale Characterization

HL 17.7: Invited Talk

Tuesday, March 13, 2018, 12:00–12:30, EW 202

Advanced Nano-scale Characterization of Nitrides using Helium Temperature Scanning Transmission Electron Microscopy Cathodoluminescence — •Gordon Schmidt — Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germany

For a detailed understanding of complex semiconductor heterostructures and the physics of devices based on them, a systematic determination and correlation of the structural, chemical, electronic, and optical properties on a nanometer scale is essential. Luminescence techniques belong to the most sensitive, non-destructive methods of semiconductor research. The combination of luminescence spectroscopy * in particular at liquid He temperatures - with the high spatial resolution of a scanning transmission electron microscopy (STEM) ( < 1 nm at RT, < 5 nm at 10 K), as realized by the technique of low temperature scanning transmission electron microscopy cathodoluminescence microscopy (STEM-CL), provides a unique, extremely powerful tool for the optical nano-characterization of semiconductors, their heterostructures as well as their interfaces. Typical results which will be presented include nm-scale correlation of the optical and structural properties as well as appearance of structural defects in nitride based nanostructures.