Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 17: Focussed Session: Atomic Scale Characterization

HL 17.8: Invited Talk

Tuesday, March 13, 2018, 12:30–13:00, EW 202

Tip-enhanced Raman spectroscopy in semiconductor nanostructures and graphene — Emanuele Poliani¹ and •Janina Maultzsch^1,2 — ¹Technische Universität Berlin, Germany — ²Friedrich-Alexander-Universität Erlangen

Tip-enhanced Raman spectroscopy provides spatial resolution beyond the diffraction limit and is therefore useful for application in the characterization of semiconductor nanostructures. We will present experimental results on group-III nitride nanostructures and on graphene-based materials. In a doped GaN DBR structure, we investigate the carrier dependence of the Raman signal and the periodicity of the structure. In isotopically modified graphene with 12C and 13C regions, we discuss our investigations of the interface between the two regions and of superlattice structures. Finally, we show in carbon nanotubes that the strong polarization dependence present in conventional Raman scattering is almost absent in TERS.