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Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 22: Nitrides: Preparation and characterization I

Dienstag, 13. März 2018, 14:00–15:30, EW 203

14:00 HL 22.1 GaN as a photo-catalyst for carbon dioxide reduction — •Andreas Zeidler, Viktoria Kunzelmann, and Martin Stutzmann
14:15 HL 22.2 Microscopic interface and composition analysis of one-directionally lattice-matched AlInN — •Philipp Horenburg, Heiko Bremers, Ronald Korn, Uwe Rossow, and Andreas Hangleiter
14:30 HL 22.3 Correlation of structural and optical properties of GaN/AlN quantum disks embedded in nanowires by highly spatially cathodoluminescence microscopy — •Bowen Sheng, Frank Bertram, Ping Wang, Xiaoxiao Sun, Gordon Schmidt, Marcus Müller, Peter Veit, Thomas Hempel, Jürgen Christen, and Xinqiang Wang
14:45 HL 22.4 Investigation of AlN layer growth evolution under a Ga surfactant effect — •Christopher Hein, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
15:00 HL 22.5 Analysis of the low temperature internal quantum efficiency of GaInN/GaN quantum wells — •Fedor Alexej Ketzer, Torsten Langer, Philipp Henning, Heiko Bremers, Uwe Rossow, Dirk Menzel, and Andreas Hangleiter
15:15 HL 22.6 Photoelectrochemical characterization of p-type GaN for application as a photocatalyst for CO2 reduction — •Viktoria Kunzelmann, Andreas Zeidler, Ian Sharp, and Martin Stutzmann
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