Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 22: Nitrides: Preparation and characterization I

HL 22.1: Vortrag

Dienstag, 13. März 2018, 14:00–14:15, EW 203

GaN as a photo-catalyst for carbon dioxide reduction — •Andreas Zeidler, Viktoria Kunzelmann, and Martin Stutzmann — Walter Schottky Institut, Technische Univeristät München, Deutschland

Carbon dioxide (CO₂) has reached a critical level in the atmosphere and counts as one of the main reasons for global warming. Reducing this greenhouse gas to hydrocarbon fuels would help solving environmental issues and simultaneously address challenges such as energy storage and energy resource shortage. Converting CO₂ into usable fuels via photo-catalytic reactions is one way to address this issue. Using gallium nitride (GaN) as a photo-electrode is promising, since GaN is relatively stable under operating conditions and provides electrons with sufficient energy for CO₂ reduction. A critical aspect for the use of GaN as a cathode material is the electronic band level profile at the surface of the material. Different doping of GaN will influence this level profile. Therefore, p-type doped and p/n-structured GaN, grown by molecular beam epitaxy, is studied via open-circuit voltage measurements, surface photovoltage and Kelvin probe force microscopy. In addition, X-ray diffraction, Raman spectroscopy, temperature-dependent photoluminescence and atomic force microscopy measurements give insights into the role of defects in the grown material and the topography of the sample surfaces.