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HL: Fachverband Halbleiterphysik

HL 23: 2D materials: Graphene and BN (joint session HL/DS)

HL 23.6: Vortrag

Dienstag, 13. März 2018, 15:15–15:30, A 151

Towards gate-controlled photoluminescence of hexagonal boron nitride quantum emitters — •Alessio Scavuzzo¹, Christian Strelow², Marko Burghard¹, Alf Mews², and Klaus Kern^{1, 3} — ¹Max Planck Institute for Solid State Research, Stuttgart, Germany — ²Institute of Physical Chemistry, University of Hamburg, Germany — ³École Polytechnique Fédérale de Lausanne, Switzerland

In the past few years, quantum emission from defect states embedded in crystalline structures has attracted increasing interest due to its promising applications in future quantum information technologies. While the properties of color centers in large band-gap 3D semiconductors like diamond or 4H-SiC are well-established, more recently attention is directed toward quantum emission from 2D systems. Along these lines, hexagonal boron nitride (hBN) has recently emerged as a very attractive 2D platform to host robust, visible light single photon emitters. Here, we report our experiments that address the possibility to control the quantum emission from hBN monolayers through electrostatic gating. To this end, we use confocal microscopy to probe the lifetime and intensity of the light emission from hBN quantum emitters within hBN/graphene vertical heterostructures as a function of temperature and back gate voltage. Moreover, through complementary Raman mapping, we demonstrate the importance of the hBN and graphene layer thickness, as well as the quality of the interface between the layers.