Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 24: Poster Session II
HL 24.20: Poster
Tuesday, March 13, 2018, 18:30–20:30, Poster F
Development of GaAs based QD structures for VECSEL and MIXSEL applications — •Tanja Finke1, Vitalii Sichkovskyi1, Cesare Alfieri2, Matthias Golling2, Ursula Keller2, and Johann Peter Reithmaier1 — 1Institute of Nanostructure Technologies and Analytics (INA), Technische Physik, CINSaT, University of Kassel, Germany — 2Institute for Quantum Electronics, Ultrafast Laser Physics Laboratory, ETH Zürich, Switzerland
By integration of vertical external cavity surface emitting lasers (VECSEL) with a semiconductor saturable absorbing mirror (SESAM), one can form a so-called mode-locked integrated external-cavity surface emitting laser (MIXSEL). With MIXSEL structures it is possible to realize very compact ultra-short high power femtosecond laser source for the frequency comb generation. By using quantum dots (QDs) for the gain and absorber material, the material properties can be tailored by additional geometry based degrees of freedom.
For the VECSEL and MIXSEL structures gain section series of test samples optimized for high dot density have been grown by MBE. The influence of the growth parameters on the optical and morphological properties of InGaAs QDs was studied by PL and AFM respectively. An overall reduction of PL FWHM down to 26 meV at 10 K was achieved. The optimum QDs were included into VECSEL gain section. For SESAM structures InGaAs QDs test samples with different designs were grown on DBR mirrors and characterized by pump-probe experiment. Fast recovery time of only 10 ps and good saturation parameters very close to QW based SESAMs were shown.