Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 24: Poster Session II
HL 24.28: Poster
Dienstag, 13. März 2018, 18:30–20:30, Poster F
MBE growth and characterization of InAs/GaSb core-shell nanowire arrays — •Gunjan Nagda1,3, Dinesh Arumugam1,3, Pujitha Perla1,3, Torsten Rieger1,3, Thomas Schäpers1,3, Detlev Grützmacher1,2,3, and Mihail Lepsa2,3 — 1Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH, 52425 Jülich — 2Peter Grünberg Institute (PGI-10), Forschungszentrum Jülich GmbH, 52425 Jülich — 3JARA - Fundamentals of Future Information Technology
InAs and GaSb are almost lattice matched and when in contact, the structure has a broken gap heterointerface. In a core-shell NW geometry, these particularities make the combination interesting for low power electronic devices (TFETs) and the study of new physical properties, e.g. two-dimensional topological insulator behavior, Majorana fermions, etc. We report on the MBE growth and characterization of InAs/GaSb nanowire arrays.
For the growth, Si (111) substrates were covered with a thin thermal SiO2 film in which two-dimensional, periodic arrays of nano-sized holes were patterned. The InAs NW growth was optimized regarding the yield and morphology. The substrate preparation is crucial for achieving a high NW yield. The growth of GaSb shell was investigated similarly obtaining optimum growth conditions. NW morphological and structural characteristics have been obtained using different microscopy methods. The small lattice mismatch between InAs and GaSb combined with the one-dimensional geometry results in misfit dislocation free core-shell NW heterointerface.