Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 24: Poster Session II

HL 24.4: Poster

Tuesday, March 13, 2018, 18:30–20:30, Poster F

Self-assembled InAs and GaN quantum dots upon ion impact — •Charlotte Rothfuchs, Andreas D. Wieck, and Arne Ludwig — Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum

In the flourishing field of quantum communication, there is a great demand for single photon sources. Single electrically and optically active quantum dots (QDs) are promising candidates due to the appealing properties of QDs generally and of self-assembled QDs particularly. These features range from high stability and wide spectral tunability to narrow linewidths and strong quantum confinement. Focused ion beam implantation into QD structures provides a possible pathway towards their fabrication based on QD disabling around an intentional self-assembled one.

Here, we present a study on the ion impact on QD structures. For this purpose, fluence-dependent models for QD morphology and luminescence are developed based on ion-induced intermixing processes and an altered quantum efficiency. The luminescence of both InAs and GaN QDs and the size and density of the latter are described by the models. A high radiation hardness is hereby observed for GaN QDs. These are influenced by a change of the quantum confined Stark effect.