Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 24: Poster Session II

HL 24.8: Poster

Tuesday, March 13, 2018, 18:30–20:30, Poster F

InP-based quantum dots for telecom wavelength: Growth and characterisations — •Birk Fritsch, Andrei Kors, Johann-Peter Reithmaier, and Mohamed Benyoucef — Institute of Nanostructure Technologies and Analystics (INA), CINSaT, Kassel University, Heinrich-Plett-Str. 40, 34132 Kassel, Germany

Semiconductor quantum dots (QDs) enable intriguing optoelectronic devices due to their discrete density of states and morphology-dependent band gap. Self-assembled InP-based QDs have proven to emit single photon emission at the telecom C band [1]. Utilising them for long-distance quantum communication requires precise growth control to obtain high quality QDs [2].

Here, we investigate the effects of different growth parameters to optimise Stranski-Krastov telecom wavelengths InP-based QD structures grown by molecular beam epitaxy with controlled dot density. High-resolution micro-photoluminescence measurements performed on the QD structures show single dot emission with narrow spectral linewidths and small fine structure splittings. Temperature dependent measurements exhibit a characteristic band gap shift, activation energy and charge carrier diffusion. Morphological analyses of the QDs using atomic force microscopy are compared with photoluminescence measurements. Moreover, studies related to doped QD structures and fabrication of pin-diode structures with embedded QDs emitting at telecom wavelength are presented.

[1] Benyoucef et al., Appl. Phys. Lett. 103 162101 (2013)

[2] Yacob et al., Appl. Phys. Lett. 104 022113 (2014)