Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 25: Focussed Session: Quantum Nanophotonics in Solid State Systems: Status, Challenges and Perspectives II (joint session HL/TT)
HL 25.11: Talk
Wednesday, March 14, 2018, 12:45–13:00, EW 201
Effect of second order piezoelectricity on exciton dipole, fine-structure and binding energies of multi-excitons in strain-tuned InGaAs/GaAs quantum dots — •Petr Klenovský1,2, Petr Steindl1,2, Johannes Aberl3, Eugenio Zallo4,5, Thomas Fromherz3, Armando Rastelli3, and Rinaldo Trotta3 — 1Department of Condensed Matter Physics, Faculty of Science, Masaryk University, Kotlářská 2, 61137 Brno, Czech Republic — 2Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno, Czech Republic — 3Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstraße 69, A-4040 Linz, Austria — 4Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, D-01069 Dresden, Germany — 5Paul-Drude-Institut für Festkörperelektronik, Hausvogteilplatz 5-7, 10117 Berlin, Germany
We study the effects of nonlinear piezoelectricity on the exciton electric dipole moment, fine-structure, and binding energies of multi-exciton complexes in strain-tuned InGaAs/GaAs quantum dots and investigate the influence of various elements of the expansion of electrical polarization in terms of applied elastic stress. We find that a presence of a large built-in stressor (like quantum dot) is necessary for the dipole inversion to occur. Furthermore, the analysis provides a simple relation to estimate the influence of applied stress on the electrical polarization in zincblende nanostructures.