Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 26: Ultra-fast phenomena

HL 26.10: Vortrag

Mittwoch, 14. März 2018, 12:00–12:15, EW 202

Laser-induced vacancy diffusion in silicon — •Tobias Zier and Martin E. Garcia — Theoretische Physik, Universität Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany

Defects, like, vacancies and/or impurities in a crystal are an ambivalent topic in the scientific dialogue. On the one hand, it is tried to decrease the number of impurities due to the high efficiency of pure materials. On the other side well defined defects are the basis of promising new effects, like, NV centers in diamond as a possible one-photon emitter. Nevertheless, in both cases a controlled mobility of crystal defects is of high interest. In order to study the possibility to guide vacancies by femtosecond-laser pulses we performed ab initio molecular dynamics simulations of laser-excited silicon with a defect density of 3.5 %. Besides the changed mobility of the vacancies by the femtosecond-laser excitation we additionally analyzed their impact on ultrafast phenomena, like, nonthermal melting and thermal phonon squeezing.