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09:30 |
HL 27.1 |
Structural and optical characterisation of germanium doped cubic AlxGa1-xN grown by molecular beam epitaxy — •Michael Deppe, Fabian Tacken, Jürgen W. Gerlach, Dirk Reuter, and Donat J. As
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09:45 |
HL 27.2 |
Photoelectrochemical response of GaN, InGaN and GaNP nanowire ensembles — •Jan M. Philipps, Rene Couturier, Sara Hölzel, Pascal Hille, Jörg Schörmann, Irina A. Buyanova, Sangam Chatterjee, Martin Eickhoff, and Detlev M. Hofmann
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10:00 |
HL 27.3 |
Impact of Growth Interruption on the Structure and Luminescence of two- and zero-dimensional GaN/AlN Heterostructures — •Hannes Schürmann, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Christoph Berger, Jürgen Bläsing, Armin Dadgar, André Strittmatter, and Jürgen Christen
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10:15 |
HL 27.4 |
Charging of self-assembled GaN quantum dot ensembles by Capacitance-Voltage spectroscopy at room temperature — •Carlo A. Sgroi, Julien Brault, Jean Y. Duboz, Arne Ludwig, and Andreas D. Wieck
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10:30 |
HL 27.5 |
Pulsed reactive magnetron sputter deposition of AlN and GaN — •Florian Hörich, Christopher Kahrmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
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10:45 |
HL 27.6 |
Direct comparison of structural and optical properties of GaN fin LED microstructure with nonpolar sidewalls — •G. Schmidt, P. Veit, S. Petzold, A. Dempewolf, T. Hempel, F. Bertram, J. Hartmann, H. Zhou, F. Steib, J. Ledig, S. Fündling, H.-H. Wehmann, A. Waag, and J. Christen
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11:00 |
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15 min. break.
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11:15 |
HL 27.7 |
MOVPE growth of large area InGaN LEDs with GaN-based tunnel junctions — •Silvio Neugebauer, Christoph Berger, Florian Hörich, Christopher Kahrmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
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11:30 |
HL 27.8 |
X-ray diffraction studies of zincblende GaN — •Martin Frentrup, Lok Yi Lee, Suman-Lata Sahonta, Menno J. Kappers, Rachel A. Oliver, Colin J. Humphreys, and David J. Wallis
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11:45 |
HL 27.9 |
Selective area growth of GaN-ZnO core-shell nanowires for photocatalytic CO2 reduction — •Florian Pantle, Max Kraut, Julia Winnerl, Marvin Koch, and Martin Stutzmann
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12:00 |
HL 27.10 |
Parametric model for the anisotropic dielectric function of m-plane AlGaN up to 20eV — •Michael Winkler, Martin Feneberg, Shigefusa F. Chichibu, Ramón Collazo, Zlatko Sitar, Maciej D. Neumann, Norbert Esser, and Rüdiger Goldhahn
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12:15 |
HL 27.11 |
Effects of well width on the recombination dynamics in m-plane GaInN/GaN quantum wells — •Philipp Henning, Fedor Alexej Ketzer, Philipp Horenburg, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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12:30 |
HL 27.12 |
Time-integrated and time-resolved luminescence studies of 3D InGaN/GaN microrod and fin heterostructures — Angelina Vogt, Jana Hartmann, Hao Zhou, Felix Blumenröther, Hergo-Heinrich Wehmann, Andreas Waag, and •Tobias Voss
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12:45 |
HL 27.13 |
Fe-doped GaN a suitable material for antiferromagnetic spintronics? — •Andrea Navarro-Quezada, Thibaut Devillers, Tian Li, Andreas Grois, Maciej Sawicki, Tomasz Dietl, and Alberta Bonanni
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