Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 27: Nitrides: Preparation and characterization II

HL 27.13: Vortrag

Mittwoch, 14. März 2018, 12:45–13:00, EW 203

Fe-doped GaN a suitable material for antiferromagnetic spintronics? — •Andrea Navarro-Quezada^1,2, Thibaut Devillers¹, Tian Li³, Andreas Grois¹, Maciej Sawicki³, Tomasz Dietl³, and Alberta Bonanni¹ — ¹Semiconductor and Solid State Physics, Johannes Kepler Universität, Linz, Austria — ²Institute of Experimentalphysics, Johannes Kepler Universität, — ³Institute of Physics, Polish Academy of Sciences, Warsaw, Poland

The control over the aggregation of magnetic ions in a non-magnetic semiconductor matrix constitutes a new way to realize semiconductor/ferromagnetic nanocomposites with yet unexplored but striking functionalities. In this work we show that it is possible to obtain a controlled and well-defined arrangement of single-phase magnetic GaxFe4-xN nanocrystals (NCs) embedded in a GaN matrix [1]. Depending on the fabrication conditions, a modification of the lattice parameter of the NCs is observed, pointing to the incorporation of Ga into the Fe4N structure and therefore, to the formation of GaFe3N. While Fe4N is a strong FM semi-metal with minority spin-polarization, GaFe3N is a weak AFM material. Our results open the perspectives of this magnetic semiconductor for the demonstration of interesting effects such as spin-pumping for spin current injectors/detectors, anisotropic magnetoresistance and the manipulation of the NCs magnetic moment via an electric field [2].

[1] A. Navarro-Quezada et al., Appl. Phys. Lett. 101, 081912 (2012)

[2] D. Sztenkiel et al., Nature Communications 7, 015034 (2017)