Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 27: Nitrides: Preparation and characterization II

HL 27.5: Vortrag

Mittwoch, 14. März 2018, 10:30–10:45, EW 203

Pulsed reactive magnetron sputter deposition of AlN and GaN — •Florian Hörich, Christopher Kahrmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter — Otto-von-Guericke University Magdeburg

Crystalline AlN and GaN buffer layers are essential to grow complex nitride semiconductor heterostructures by epitaxial methods. Using the most common growth technique, metalorganic vapor phase epitaxy, pure AlN buffers are difficult to grow due to GaN deposits in the reactor. We report on the growth of AlN and GaN layers on sapphire (0001) and silicon (111) by pulsed reactive magnetron sputtering. The crystalline quality of the layers is investigated in dependance of the nucleation layer thickness and plasma composition during growth. Atomic force microscopy and X-ray diffraction methods were used for structural analysis. Sputtered GaN layers were first grown on MOVPE-GaN templates to acquire best sputtering parameters. Sputtering of GaN is more difficult than AlN because metallic Ga melts at 29 °C and then tends to splash Ga clusters into the chamber and onto the sample.