Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 27: Nitrides: Preparation and characterization II

HL 27.9: Vortrag

Mittwoch, 14. März 2018, 11:45–12:00, EW 203

Selective area growth of GaN-ZnO core-shell nanowires for photocatalytic CO2 reduction — •Florian Pantle, Max Kraut, Julia Winnerl, Marvin Koch, and Martin Stutzmann — Walter Schottky Institut and Physics Department, Technische Universität München, Garching, Germany

GaN nanowires (NWs) have gained increasing interest as a promising system for photocatalytic water splitting and CO2 reduction due to their large surface-to-volume ratio and the favorable energy position of their bands with respect to many reduction or oxidation reactions. Compared to self-assembled growth, selective area epitaxy of NWs provides a better control over the electronic properties and the active surface area of such NWs due to the well-defined NW diameter and inter NW distance. We present the selective area growth of p-GaN core/n-ZnO shell NWs by plasma assisted molecular beam epitaxy with a shell thickness in the 10 nm range. We have performed photoluminescence and Raman spectroscopy measurements to investigate the optical and structural properties of the as-grown NW heterostructures and numerical simulations of their band structure. The internal field provided by the p-GaN/n-ZnO heterojunction improves the funneling of photo-excited conduction band electrons towards the surface, while the ZnO shell may act as a co-catalyst for CO2 reduction.