Berlin 2018 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 3: 2D Materials: Session I (joint session DS/CPP/HL)

HL 3.6: Talk

Monday, March 12, 2018, 10:45–11:00, H 2032

luminescence at defects in h-BN : excitons at stacking faults and single photon emitters — •Alberto Zobelli, Romain Bourrellier, Sophie Meuret, Michele Amato, Odile Stéphan, Luiz Tizei, and Mathieu Kociak — Laboratoire de Physique des Solides, University of Paris-Sud, CNRS, Orsay, France

h-BN is a promising material for optical application due to a strong exciton in the far UV and bright and stable defect emissions. Here we investigate the spatial localization at the nanometric scale of defects lines in this rich emission spectrum by employing an original cathodoluminescence system (nano-CL) integrated within a scanning transmission electron microscope. We show that high energy emissions are related to crystal folds leading to local changes of the layer stacking order which promote additional excitons. Furthermore, middle band gap emissions present a high spatial localization (~80 nm) and a typical zero-phonon line plus phonon replica spectroscopic signature, indicating a point defect origin. Finally, by combining our nano-CL system with an Hanbury Brown and Twiss (HBT) interferometer we identify a new bright and stable single photon emitter in the far UV.